This is a list of Semiconductor fabrication plants:
Plant Manufacture | Plant Name | Plant Location | Plant Cost (in billions $) | Production Start Year | Process Wafer (in mm) | Process Node (in nm) | Capacity Wafer/month |
---|---|---|---|---|---|---|---|
Intel | D1D[1] | USA, OR, Hillsboro | 2003 | 300 | 32 | ||
Intel | D1C[1] | USA, OR, Hillsboro | 2001 | 300 | 32 | ||
Intel | D1X[2] | USA, OR, Hillsboro | 2013 | 300 | 22 | ||
Intel | Fab 12[1] | USA, AZ, Chandler | 1996 | 300 | 65 | ||
Intel | Fab 32[1][3] | USA, AZ, Chandler | 3 | 2007 | 300 | 45 | |
Intel | Fab 32[1] | USA, AZ, Chandler | 300 | 32 / 22 | |||
Intel | Fab 42[4] | USA, AZ, Chandler | 5 | 2013 | 300 | 14 | |
Intel | Fab 11x[1] | USA, NM, Rio Rancho | 2002 | 300 | 32 | ||
Intel | Fab 11x[1] | USA, NM, Rio Rancho | 2002 | 300 | 45 | ||
Intel | Fab 17[1] | USA, MA, Hudson | 1998 | 200 | |||
Intel | Fab 10[1] | Ireland, Leixlip | 1994 | 200 | |||
Intel | Fab 14[1] | Ireland, Leixlip | 1998 | 200 | |||
Intel | Fab 24[1] | Ireland, Leixlip | 2006 | 300 | 65 | ||
Intel | Fab 24[1] | Ireland, Leixlip | 2006 | 300 | 90 | ||
Intel | Fab 28[1] | Israel, Kiryat Gat | 2008 | 300 | 45 | ||
Intel | Fab 68[1][5] | China, Dalian | 2.5 | 2010 | 300 | 65 | |
Motorola | MOTOFAB1[6] | Mexico, Guadalajara | 2002 | 300 | 32 | ||
GlobalFoundries | Fab 1[7] | Germany, Dresden | 2.5 | 2005 | 300 | 90 | 80,000 |
GlobalFoundries | Fab 1[8] | Germany, Dresden | 300 | 40 | 80,000 | ||
GlobalFoundries | Fab 1[8] | Germany, Dresden | 300 | 45 | 80,000 | ||
GlobalFoundries | Fab 1[8] | Germany, Dresden | 300 | 55 | 80,000 | ||
GlobalFoundries | Fab 1[8] | Germany, Dresden | 2006 | 300 | 65 | 80,000 | |
GlobalFoundries | Fab 1[8] | Germany, Dresden | Future | 300 | 28 | 80,000 | |
GlobalFoundries | Fab 1[8] | Germany, Dresden | Future | 300 | 32 | 80,000 | |
GlobalFoundries | Fab 7[8] | Singapore | 300 | 40 | 50,000 | ||
GlobalFoundries | Fab 7[8] | Singapore | 300 | 130 | 50,000 | ||
GlobalFoundries | Fab 8[9] | USA, NY, Malta | 4.6 | 2012 | 300 | 28 | 60,000 |
GlobalFoundries | Fab 2[10] | Singapore | 200 | 350 | 50,000 | ||
GlobalFoundries | Fab 2[10] | Singapore | 200 | 600 | 50,000 | ||
GlobalFoundries | Fab 3/5[10] | Singapore | 200 | 180 | 54,000 | ||
GlobalFoundries | Fab 3/5[10] | Singapore | 200 | 350 | 54,000 | ||
GlobalFoundries | Fab 3E[10] | Singapore | 200 | 180 | 34,000 | ||
GlobalFoundries | Fab 6[10] | Singapore | 200 | 110 | 45,000 | ||
GlobalFoundries | Fab 9[11] | UAE, Abu Dhabi | 2015 | ||||
GlobalFoundries | Fab 6[10] | Singapore | 200 | 180 | 45,000 | ||
TSMC | Fab 2 | Taiwan, Hsinchu | 150 | ||||
TSMC | Fab 3 | Taiwan, Hsinchu | 200 | ||||
TSMC | Fab 5 | Taiwan, Hsinchu | 200 | ||||
TSMC | Fab 6 | Taiwan, Tainan | 200 | ||||
TSMC | Fab 8 | Taiwan, Hsinchu | 200 | ||||
TSMC | Fab 10 | China, Shanghai | 200 | ||||
TSMC | Fab 12 | Taiwan, Hsinchu | 300 | 28 | |||
TSMC | Fab 12 | Taiwan, Hsinchu | 300 | 22 | |||
TSMC | Fab 14 | Taiwan, Tainan | 300 | 28 | |||
TSMC WaferTech | Fab 14 | USA, Washington, Camas | 200 | ||||
TSMC | Fab 15[12] | Taiwan, Taichung | 2011Q4 | 300 | 28 | ||
TSMC | Fab 15[12] | Taiwan, Taichung | 2011Q4 | 300 | 20 | ||
TSMC | Fab 16 | Taiwan, Taichung | Future | 300 | 28 | ||
UMC | Fab 6A | Taiwan, Hsinchu | 150 | ||||
UMC | Fab 8AB | Taiwan, Hsinchu | 200 | ||||
UMC | Fab 8C | Taiwan, Hsinchu | 200 | ||||
UMC | Fab 8D | Taiwan, Hsinchu | 200 | ||||
UMC | Fab 8E | Taiwan, Hsinchu | 200 | ||||
UMC | Fab 8F | Taiwan, Hsinchu | 200 | ||||
UMC | Fab 8S | Taiwan, Hsinchu | 200 | ||||
UMC | Fab 12A | Taiwan, Tainan | 300 | ||||
UMC | Fab 12 | Singapore | 300 | ||||
Intel/Micron | IM Flash[13] | Singapore | 2011.04 | 300 | 25 | ||
Intel/Micron | IM Flash | USA, UT, Lehi | 300 | 20 | |||
Intel/Micron | IM Flash | USA, VA, Manassas | |||||
IBM | Building 323[14][15] | USA, NY, East Fishkill | 2.5 | 2002 | 300 | ||
IBM | Burlington Fab | USA, VT, Essex Junction | 200 | ||||
STMicroelectronics | Crolles 1 / Crolles 200 | France, Crolles | 1993 | 200 | |||
STMicroelectronics | Crolles2 | France, Crolles | 2003 | 300 | 90 | ||
STMicroelectronics | Crolles2 | France, Crolles | 300 | 65 | |||
STMicroelectronics | Crolles2 | France, Crolles | 300 | 45 | |||
STMicroelectronics | Crolles2 | France, Crolles | 300 | 32 | |||
STMicroelectronics | Agrate | Italy, Agrate Brianza | 200 | ||||
STMicroelectronics | Catania | Italy, Catania | 1997 | 200 | |||
STMicroelectronics | Rousset | France, Rousset | 2000 | 200 | |||
CNSE | NanoFab 300 North[16] | USA, NY, Albany | .175 | 2005 | 300 | 65 | |
CNSE | NanoFab 300 North[16] | USA, NY, Albany | 300 | 45 | |||
CNSE | NanoFab 300 North[16] | USA, NY, Albany | 300 | 32 | |||
CNSE | NanoFab 300 North[16] | USA, NY, Albany | 300 | 22 | |||
CNSE | NanoFab 300 South[16] | USA, NY, Albany | .050 | 2004 | 300 | 22 | |
CNSE | NanoFab 200 [17] | USA, NY, Albany | .016 | 1997 | 200 | ||
CNSE | NanoFab Central [16] | USA, NY, Albany | .150 | 2009 | 300 | 22 | |
Powerchip Semiconductor | Memory Foundry[18] | Taiwan | 300 | 90 | |||
Powerchip Semiconductor | Memory Foundry[18] | Taiwan | 300 | 70 | |||
Freescale Semiconductor | ATMC[19] | USA, TX, Austin | 1995 | 200 | 90 | ||
Freescale Semiconductor | Chandler Fab[20] | USA, AZ, Chandler | 1.1[21] | 1993 | 200 | 180 | |
Freescale Semiconductor | Oak Hill Fab[22] | USA, TX, Austin | .8[23] | 1991 | 200 | 250 | |
Freescale Semiconductor | Sendai Fab[24] | Japan, Sendai | 1987 | 150 | 500 | ||
Freescale Semiconductor | Toulouse Fab[25] | France, Toulouse | 1969 | 150 | 650 | ||
SMIC | S1 Mega Fab[26] | China, Shanghai | 200 | 90 | |||
SMIC | S1 Mega Fab[26] | China, Shanghai | 200 | 350 | |||
SMIC | S1 Mega Fab[26] | China, Shanghai | 200 | 90 | |||
SMIC | S2[26] | China, Shanghai | 300 | 45/40 | |||
SMIC | B1 Mega Fab[26] | China, Beijing | 2004 | 300 | 130 | ||
SMIC | B1 Mega Fab[26] | China, Beijing | 2004 | 300 | 65/55 | ||
SMIC | Fab 7[26] | China, Tianjin | 2004 | 200 | 350 | ||
SMIC | Fab 7[26] | China, Tianjin | 200 | 130 | |||
Winbond | Memory Product Foundry[27] | Taiwan, Taichung | 300 | 90 | |||
Winbond | Memory Product Foundry[27] | Taiwan, Taichung | 300 | 65 | |||
MagnaChip | F-5[28] | South Korea, Cheongju | 2005 | 200 | 130 | ||
ProMOS | Fab 4[29][30] | Taiwan, Taichung | 1.6 | 300 | 70 | ||
Telefunken Semiconductors | Heilbronn | Germany, Heilbronn | 150 | 10,000 | |||
Telefunken Semiconductors | Roseville fab[31] | USA, CA, Roseville | 200 | ||||
Hynix | M7[32] | South Korea, Icheon | 200 | ||||
Hynix | M8[32] | South Korea, Cheongju | 200 | ||||
Hynix | M9[32] | South Korea, Cheongju | 200 | ||||
Hynix | E1[32] | USA, OR, Eugene | 200 | ||||
Hynix | HC1[32] | China, Wuxi | 200 | ||||
Fujitsu | Fab No. 1[33] | Japan, Mie Prefecture | 2005 | 300 | 65 | 15,000 | |
Fujitsu | Fab No. 1[33] | Japan, Mie Prefecture | 2005 | 300 | 90 | 15,000 | |
Fujitsu | Fab No. 2[33] | Japan, Mie Prefecture | 2007 | 300 | 65 | 25,000 | |
Fujitsu | Fab No. 2[33] | Japan, Mie Prefecture | 2007 | 300 | 90 | 25,000 | |
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 65 | ||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 90 | ||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 130 | ||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 180 | ||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 250 | ||||
Cypress Semiconductor | Minnesota fab | USA, MN, Bloomington | 1991 | 350 | |||
ON Semiconductor | Gresham[34] | USA, OR, Gresham | Future | 200 | 65 | ||
ON Semiconductor | Gresham[34] | USA, OR, Gresham | 200 | 130 | |||
ON Semiconductor | Pocatello[35] | USA, ID, Pocatello | 200 | 350 | |||
ON Semiconductor | Pocatello[35] | USA, ID, Pocatello | 200 | 5000 | |||
National Semiconductor | Greenock[36] | Scotland, Greenock | 150 | 20,833 | |||
National Semiconductor | South Portland[37] | USA, ME, South Portland | .932 | 1997 | 350 | ||
National Semiconductor | South Portland[37] | USA, ME, South Portland | 250 | ||||
National Semiconductor | South Portland[37] | USA, ME, South Portland | 180 | ||||
National Semiconductor | West Jordan | USA, UT, West Jordan | 1977 | 102 | |||
National Semiconductor | Arlington | USA, TX, Arlington | 1985 | 152 | |||
Samsung | Line-16[38] | South Korea, Hwaseong | 2011 | 300 | 20 | 12,000 |